FQU13N10-VB is an N-Channel trench field effect transistor with TO251 package, suitable for occasions with an operating voltage of 100V and a current of 15A. Its on-resistance is 115mΩ at different gate-source voltages, which can provide a lower on-resistance and is suitable for high-power applications. The threshold voltage is 1.41V, which is suitable for a variety of circuit design requirements.