FQP13N10L-VB is a high-performance N-channel MOSFET that uses advanced trench technology and is designed for medium voltage and high current applications. It has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, supporting a continuous drain current (ID) of up to 18A. The threshold voltage (Vth) of this MOSFET is 1.8V and the on-resistance (RDS(ON)) is 127mΩ@VGS=10V, making it an excellent performer in high-efficiency switching applications.