**SPB18P06PG-VB** is a single P-channel MOSFET in TO263 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of -60V, this MOSFET is suitable for negative supply voltage or power switch applications. Its gate-source voltage (VGS) is ±20V and can carry a maximum drain current of -30A. Its on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V, with low conduction loss. The use of Trench technology enables this MOSFET to provide higher efficiency and lower heat loss at high currents. **SPB18P06PG-VB** is widely used in power management, motor control, load switching and other power conversion applications, especially for negative power supply circuits requiring P-channel MOSFETs.