The IPP084N06L3 G-VB is a single N-channel MOSFET in a TO220 package, designed for efficient power management and power control applications. It has a rated drain-source voltage (VDS) of 60V, a maximum drain current (ID) of 120A, and uses advanced trench technology to provide low on-resistance (RDS(ON) = 5mΩ @ VGS = 10V). The device can withstand a gate-source voltage (VGS) of ±20V and has a typical gate threshold voltage (Vth) of 3V, making it suitable for operation under low voltage and high current conditions. Due to its efficient turn-on characteristics and rugged design, it excels in applications requiring fast switching performance and high reliability.