SI9410BDY-T1-E3-VB is an N-channel MOSFET designed for low voltage, high current applications. It is rated at 30V and can continuously withstand currents up to 12A. This MOSFET has excellent on-characteristics, with a static on-resistance of 12mΩ at 10V and 15mΩ at 4.5V. This low resistance helps reduce power consumption and heat, making it suitable for applications that require efficient energy consumption. SI9410BDY-T1-E3-VB has a wide range of gate-source voltage (Vgs), up to ±±20V, and has good control characteristics. Its threshold voltage (Vth) ranges from 0.8V to 2.5V, enabling precise control in different applications. SI9410BDY-T1-E3-VB is a versatile N-channel MOSFET suitable for a variety of low voltage, high current applications, providing high performance and reliability solutions for modules such as power management, motor control and DC-DC converters.