FDMC6679AZ-VB is a high-performance P-channel MOSFET in DFN8(3X3) package, designed for applications requiring high current and low conduction loss. The drain-source voltage (VDS) of this MOSFET is -30V, and the gate-source voltage (VGS) withstand voltage is ±20V. Its threshold voltage (Vth) is -2.5V, ensuring that it can be turned on at a lower gate voltage. FDMC6679AZ-VB has a very low on-resistance (RDS(ON)), which is 18mΩ at VGS=4.5V and 11mΩ at VGS=10V, and supports a continuous drain current of up to -45A. This MOSFET uses Trench technology, providing efficient switching performance and low conduction loss, and is ideal for power management and high-power switching applications.