The FQP19N20C-VB is a high-performance N-channel MOSFET in a TO220 package designed for medium and high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for applications that handle medium voltages. Its gate-source voltage (VGS) range is ±20V, ensuring a wide range of gate drive capabilities. The threshold voltage (Vth) of the FQP19N20C-VB is 3V, and the on-resistance (RDS(ON)) is 110mΩ at a gate voltage of 10V, capable of carrying up to 30A of continuous drain current (ID). Manufactured using Trench technology, this MOSFET offers low conduction losses and high switching speeds, making it suitable for a variety of medium and high power electronic systems.