IRF9Z24SPBF-VB is a high current P-channel power MOSFET in TO263 package. Designed for medium and high voltage applications, this MOSFET has a drain-source breakdown voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, making it suitable for power switching and power regulation. Its threshold voltage (Vth) is -1.7V, and its on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V. The maximum drain current (ID) is -30A. IRF9Z24SPBF-VB uses Trench technology to provide low conduction loss and good switching performance, making it suitable for circuits requiring high current and high efficiency.