SI3900DV-T1-E3-VB is a high-performance, low on-resistance dual N-channel MOSFET in a SOT23-6 package, designed for efficient power management and load switching applications. This product has a drain-source voltage (V_DS) of 20V, a gate-source voltage (V_GS) of ±12V, and a wide operating range, suitable for various medium and low voltage systems. Its on-resistance (R_DS(on)) is 22mΩ at V_GS = 4.5V and 28mΩ at V_GS = 2.5V, with excellent low-loss characteristics, especially in high-frequency applications. The maximum drain current (I_D) is 6A, which can meet the needs of high current loads. SI3900DV-T1-E3-VB uses Trench technology to optimize switching performance and significantly reduce power consumption, making it ideal for a variety of applications such as power conversion, load switching, and battery management. SI3900DV-T1-E3-VB is a high-performance, low on-resistance dual N-channel MOSFET in a SOT23-6 package, designed for efficient power management and load switching applications. This product has a drain-source voltage (V_DS) of 20V, a gate-source voltage (V_GS) of ±12V, and a wide operating range, suitable for various medium and low voltage systems. Its on-resistance (R_DS(on)) is 22mΩ at V_GS = 4.5V and 28mΩ at V_GS = 2.5V, with excellent low-loss characteristics, especially in high-frequency applications. The maximum drain current (I_D) is 6A, which can meet the needs of high current loads. SI3900DV-T1-E3-VB uses Trench technology to optimize switching performance and significantly reduce power consumption, making it ideal for a variety of applications such as power conversion, load switching, and battery management.