SI2318DS-T1-GE3-VB
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7 天
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- Product SI2318DS-T1-GE3-VB
- Package SOT23-3
- Polarity Single-N
- Technology Trench
- VDS/VCE(V) 30V
- VGS/VGE(±V) ±20V
-
ID/ICE (A) 1.7V - Vthtyp(V) 6.5A
- RDS(4.5V) (mΩ) 33(mΩ)
- RDS(10V) (mΩ) 30(mΩ)
- 数量1---USD价格 0.0728
- 数量10---USD价格 0.0667
- 数量30---USD价格 0.0607
- 数量100---USD价格 0.0516
SI2318DS-T1-GE3 (VB1330) is an N-channel power MOSFET, suitable for modules in power management modules, power tools, household appliances, battery management systems, industrial control systems and communication equipment. It has low resistance and high current carrying capacity, making it suitable for circuits requiring high power and efficiency.Frequently Bought Products
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畅销产品-
$0.07
-
$0.53
-
$0.36
-
$0.34
-
$0.32
-
$0.07
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