STP33N10-VB is a single N-channel MOSFET based on Trench technology, packaged in TO220, designed for high-efficiency power conversion and high-current applications. Its maximum drain-source voltage (V_DS) is 100V and its maximum drain current (I_D) is 55A, which can meet the needs of a variety of high-power electronic devices. This MOSFET has a low threshold voltage (V_th) of 1.8V, suitable for low drive voltage control. Its on-resistance (R_DS(ON)) is 38mΩ (at V_GS = 4.5V) and 36mΩ (at V_GS = 10V), ensuring high efficiency and low energy loss. STP33N10-VB MOSFET can be widely used in high-frequency switching power supplies, power tool drives, LED drives and other fields.