IRFB31N20DPBF-VB is a high-performance N-channel MOSFET in a TO220 package, suitable for applications requiring high voltage and high current. The maximum drain-source voltage (VDS) of this MOSFET is 200V, and the gate-source voltage (VGS) is ±20V, making it adaptable to various power supply environments. Its threshold voltage (Vth) is 3V, and it can operate stably at medium gate voltage. Using Trench technology, IRFB31N20DPBF-VB has low on-resistance (RDS(ON)) and high current handling capability, with an on-resistance of 58mΩ (@VGS=10V) and a maximum drain current of 35A. These features make it particularly suitable for high power conversion, industrial equipment, and power management applications.