SI4688DY-T1-GE3-VB is an N-channel MOSFET in a SOP8 package with Trench technology, designed for high-efficiency power switching and low-voltage current management. The MOSFET has a VDS maximum of 30V, a gate-source voltage (VGS) maximum of ±20V, and provides extremely low on-resistance (RDS(ON)). At VGS = 10V, the on-resistance is 8mΩ, and at VGS = 4.5V it is 11mΩ, keeping it low-loss and high-efficiency in high-frequency switching applications. SI4688DY-T1-GE3-VB has a maximum ID of 13A, making it suitable for use in applications requiring higher current handling capabilities, especially in portable devices, battery management, and high-efficiency power conversion systems.