This is a single N-channel MOSFET in TO252 package with high efficiency and strong current carrying capacity, suitable for a variety of power management and switching applications. The device has a maximum drain-source voltage (VDS) of 100V, a maximum gate-source voltage (VGS) of ±20V, an on-resistance (RDS(ON)) of 35mΩ at VGS of 4.5V and 30mΩ at VGS of 10V, with low power consumption and excellent conduction performance. Its maximum drain current (ID) can reach 40A, capable of handling high current applications. Using Trench technology, MDD1902RH-VB provides higher efficiency and lower on-resistance, and is widely used in applications such as power conversion, DC-DC converters and load switches.