SI2304DS-T1-E3-VB

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VBsemi

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$0.07 /pc
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(9999 可用)
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  • Product SI2304DS-T1-E3-VB
  • Package SOT23-3
  • Polarity Single-N
  • Technology Trench
  • VDS/VCE(V) 30V
  • VGS/VGE(±V) ±20V
  • ID/ICE (A) 1.7V
  • Vthtyp(V) 6.5A
  • RDS(4.5V) (mΩ) 33(mΩ)
  • RDS(10V) (mΩ) 30(mΩ)
  • 数量1---USD价格 0.0728
  • 数量10---USD价格 0.0667
  • 数量30---USD价格 0.0607
  • 数量100---USD价格 0.0516

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This device is a P-Channel field effect transistor in a TO252 package, suitable for a variety of application scenarios. The main parameters include negative voltage rating, high current rating, and low on-state resistance, which enable it to have good performance under different power supply and load conditions.

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